Optical Failure Isolation
Static and Dynamic Failure Isolation
on Advanced Microelectronics component (PCB, package, Wafer and die)
Proven for 7 nm
Overview
The capability to reveal defect, at the microscopic scale, on semiconductors devices is a key parameters to Optimize your yield and qualification processes, as well as providing a high level of quality to your customer through fast and efficient customer return analysis.
Core Technologies
Through a large range of Electrical Failure Isolation (EFI) techniques and methods, ThermoFisher EFI tools set solution allows addressing this problematic from PCB level, going through complex packaging assembly, down to wafer and die level and single defective transistor or metallization identification.
Mid Infrared, Near Infrared, Visible and EBeam based techniques are available on ELITE and Meridian extended porfolio, with a high level of configurability depending on your current needs and requirements.
Lock in thermography solutions : Elite
Revolutionary progress in 2.5D and 3D packaging, increasingly complex interconnect architectures, and next-generation power devices are introducing new challenges in semiconductor failure analysis. As components shrink while growing in complexity, defects often appear as localized irregularities in power dissipation, generating subtle thermal signatures that are essential for diagnosing root causes. The ThermoFisher ELITE System is a high-precision fault isolation solution designed to quickly and non-destructively locate defects using advanced IR lock-in thermography. Featuring patented noise reduction technologies, it achieves high sensitivity in defect detection. Its ability to integrate high-resolution infrared imaging with laser scanning microscopy ensures outstanding accuracy, helping accelerate the identification of failure mechanisms. ELITE VX is also available to address Failure Isolation on Power devices up to 10kV.
Elite Lite
Localize defects (Shorts, leakage and opens) in module, package
Lock In Thermography,
Option: Absolute Temperature Mapping, 3D localization
Elite
Localize defects (Shorts, leakage and opens) in module, package and die
Lock In Thermography, LSM imaging and OBIRCh
VX version to cover power devices up to 10kV
Option: Laser Marking, Absolute Temperature Mapping, Flexible probing…
Elite 300
Localize defects (Shorts, leakage and opens) wafer 300mm, package and die
Lock In Thermography, LSM imaging and OBIRCh
Option: Laser Marking, Absolute Temperature Mapping, Flexible probing…
Emission microscopy and LSM solutions: Meridian family
The ThermoFisher Meridian Family is designed to perform inverted photon emission (EMMI) and laser scanning microscopy analysis on devices stimulated by static bias via probe card or micro-probes. With the overall cost of ownership for the system being a critical aspect of profitability. The Meridian S System offers a range of photon emission options, dual-side probing flexibility and an upgrade path to dynamic optical fault isolation capabilities such as laser voltage imaging/probing and soft defect localization The Meridian S System is designed for use in failure analysis labs worldwide, for Identification of systematic process, design or integration issues and Isolation of root cause for random electrical failures. The Meridian 4 System is the preferred choice for developers of advanced, low-voltage, high-density semiconductor devices requiring performance and the ability to diagnose wide-ranging failure modes, including parametric failures and those resulting from design-process marginalities. With time-to-yield being critical to profitability, it is too costly for advanced foundries, integrated device manufacturers and fabless companies to wait until after dicing and packaging to identify the source of electrical faults. The Meridian WS and WS-DP system enable faster defect localization by using production testers, load boards, and probe cards on full 300mm/200mm
wafers.
Meridian S
Localize defects (Shorts, leakage and opens) on silicon dies or piece of wafers
Photon Emission, OBIRCh, Solid Immersion Lenses (SIL)
Option: High Voltage Option (EMMI and OBIRCh) for SiC and GaN investigation, Laser marking, CAD connectivity…
Meridian IV
Localize defects (Shorts, leakage and opens) on silicon dies or piece of wafers
Photon Emission, OBIRCh, LADA, Laser Voltage Imaging and Probing, Solid Immersion Lenses (SIL)
Option: Time Resolved LADA, CAD connectivity…
Meridian Waferscan
Localize defects (Shorts, leakage and opens) on full 300mm and 200mm wafers
Photon Emission, OBIRCh, LADA, Laser Voltage Imaging and Probing, Solid Immersion Lenses (SIL)
Automated Probe To Pad Alignment, Automated Die to Die stepping
Option: Timed work flow Resolved LADA, CAD connectivity…
Applications
PCB and package level Failure Isolation
• Lock In Thermography for short and leakage detection
• RF-LIT for Open detection – New
• From 20 by 16 cm Field Of View down to Micrometer scale analysis
Power Electronics Failure
• High Voltage certified solution, up to 10kV application
• LIT, OBIRCh and Photon Emission techniques compatibility
Silicon Level Static Failure Isolation
• Static Photon Emission and OBIRCh (Best in class sensitivity)
• Inverted architecture for backside investigation on packaged dies and piece of wafer
Silicon Level Dynamic Failure Isolation
• Laser Voltage Imaging and Probing technique for transistor level investigations
• Dynamic Laser Stimulation techniques (LADA, SDL…)
• Dynamic Photon Emission with best in class cameras
• Inverted architecture compatible with dynamic Emulation (ATE)
Wafer level Failure Isolation for Yield ramp up
• Static Photon Emission and OBIRCh (Best in class sensitivity) & LVx for scan chain debug
• Inverted architecture for backside investigation on full 300mm wafers
• Cantilever and vertical probe card compatible
