Optical Failure Isolation

Static and Dynamic Failure Isolation for Advanced Semiconductor Devices

PCB, Package, Wafer and Die Analysis

Proven on technologies down to 7 nm

Overview

Rapid and accurate defect localization is essential for improving yield, accelerating product qualification, and ensuring the highest levels of product reliability. As semiconductor devices become increasingly complex, identifying electrical and physical failure mechanisms at microscopic scale has become a critical step in both development and manufacturing environments.

Sector Technologies provides advanced optical failure isolation solutions capable of localizing defects from PCB and package level down to individual transistors and interconnect structures. These technologies enable faster root cause analysis, reduced time to resolution, and improved manufacturing efficiency.

Core Technologies

Our portfolio combines the latest Thermo Fisher Scientific Electrical Failure Isolation (EFI) technologies, providing comprehensive solutions for defect localization across a wide range of applications.

From printed circuit boards and advanced packaging assemblies to full wafers and individual dies, our systems support failure analysis workflows throughout the entire semiconductor value chain.

Available technologies include:

  • Lock-In Thermography (LIT)
  • RF Lock-In Thermography (RF-LIT)
  • Optical Beam Induced Resistance Change (OBIRCH)
  • Photon Emission Microscopy (EMMI)
  • Laser Scanning Microscopy (LSM)
  • Laser Voltage Imaging (LVI)
  • Laser Voltage Probing (LVP)
  • Laser Assisted Device Alteration (LADA)

These solutions cover applications ranging from package-level fault localization to transistor-level defect identification.

Elite Family : Advanced Lock-in Thermography Solutions

The rapid adoption of 2.5D and 3D packaging technologies, increasingly complex interconnect architectures, and next-generation power devices has introduced significant challenges for failure analysis laboratories.

Defects often manifest themselves through localized power dissipation anomalies that generate subtle thermal signatures. Detecting and interpreting these signatures quickly is essential for accurate root cause identification.

The Thermo Fisher ELITE platform provides highly sensitive, non-destructive fault localization through state-of-the-art infrared lock-in thermography. Patented noise-reduction technologies deliver exceptional thermal sensitivity, while integration with high-resolution laser scanning microscopy enhances defect localization accuracy.

For power electronics applications, the ELITE VX platform extends capability to devices operating at voltages up to 10 kV.

Elite Lite

  • Localization of shorts, leakage paths and open circuits in modules and packages
  • Lock-In Thermography (LIT)
  • Optional Absolute Temperature Mapping
  • Optional 3D defect localization

Datasheet

Elite VX and DX

  • Localization of shorts, leakage paths and open circuits in packages and silicon devices
  • Lock-In Thermography (LIT)
  • Laser Scanning Microscopy (LSM)
  • OBIRCH analysis
  • VX configuration available for high-voltage power devices up to 10 kV
  • Optional laser marking
  • Optional flexible probing
  • Optional Absolute Temperature Mapping

Datasheet

Elite 300

  • Failure localization on 300 mm wafers, packages and dies
  • Lock-In Thermography (LIT)
  • Laser Scanning Microscopy (LSM)
  • OBIRCH analysis
  • Optional laser marking
  • Optional flexible probing
  • Optional Absolute Temperature Mapping

Datasheet

Meridian Family : Photon Emission and Laser Scanning Microscopy Solutions

The Thermo Fisher Meridian product family is designed for advanced photon emission microscopy and laser scanning microscopy analysis. The systems support static bias stimulation through probe cards or micro-probing platforms and deliver industry-leading sensitivity for electrical fault localization.

Meridian S

The Meridian S platform provides a cost-effective solution for routine failure analysis applications. It offers multiple photon emission detection options, dual-side probing capability, and a scalable upgrade path toward advanced dynamic fault isolation techniques.

Typical applications include:

  • Process monitoring
  • Design validation
  • Customer return analysis
  • Root cause investigation of random electrical failures

Meridian IV

The Meridian IV platform addresses the requirements of advanced semiconductor technologies where low-voltage operation, high circuit density, and complex failure mechanisms demand enhanced diagnostic capability.

Meridian WaferScan

Time-to-yield is a critical metric for both foundries and integrated device manufacturers. Waiting until dicing and packaging before identifying electrical defects significantly increases development costs.

The Meridian WaferScan platform enables defect localization directly on production wafers using standard test infrastructure, including probe cards, load boards, and automatic test equipment.

Meridian S

Key Capabilities

  • Localization of shorts, leakage paths and open circuits on silicon dies and wafer fragments
  • Static Photon Emission Microscopy
  • OBIRCH analysis
  • Solid Immersion Lens (SIL) technology

Available Options

  • High-voltage configuration for SiC and GaN devices
  • Enhanced EMMI and OBIRCH performance
  • Laser marking
  • CAD navigation and connectivity

Datasheet

Meridian IV

Key Capabilities

  • Photon Emission Microscopy (EMMI)
  • OBIRCH
  • LADA
  • Laser Voltage Imaging (LVI)
  • Laser Voltage Probing (LVP)
  • Solid Immersion Lens technology

Available Options

  • Time-Resolved LADA
  • Advanced CAD integration

Datasheet

Meridian Waferscan

Key Capabilities

  • Inspection of full 200 mm and 300 mm wafers
  • Photon Emission Microscopy (EMMI)
  • OBIRCH
  • LADA
  • Laser Voltage Imaging and Probing
  • Solid Immersion Lens technology
  • Automated probe-to-pad alignment
  • Automated die-to-die navigation

Available Options

  • Time-Resolved LADA
  • Advanced CAD connectivity

Datasheet

Applications

PCB and package level Failure Isolation

  • Lock-In Thermography for short-circuit and leakage detection
  • RF-LIT for open-circuit detection
  • Inspection from large-format assemblies down to micrometer-scale defect localization

Power Electronics Failure Analysis

  • Certified high-voltage solutions supporting applications up to 10 kV
  • Compatible with LIT, OBIRCH and Photon Emission techniques
  • Optimized for SiC and GaN technologies

 

Silicon Level Static Failure Isolation

  • Best-in-class sensitivity for static Photon Emission and OBIRCH analysis
  • Inverted architecture enabling backside investigation of packaged devices and wafer fragments

Silicon Level Dynamic Failure Isolation

  • Laser Voltage Imaging and Probing for transistor-level diagnostics
  • Dynamic laser stimulation techniques including LADA
  • High-sensitivity dynamic Photon Emission analysis
  • Compatibility with emulation and ATE-based workflows

Wafer level Failure Isolation for Yield improvement

  • Rapid localization of manufacturing defects directly on production wafers
  • Static Photon Emission and OBIRCH analysis with best-in-class sensitivity
  • LVx capabilities for scan-chain debug
  • Backside analysis on full 300 mm wafers
  • Compatible with both cantilever and vertical probe card architectures