Overview

Dynamic Failure Analysis (DFA) and Design Debug techniques provide direct visibility into transistor activity while devices operate under real-world conditions.

As semiconductor technologies continue to shrink, identifying marginal failures becomes increasingly challenging. Many defects are associated with subtle voltage fluctuations, timing violations, or intermittent behaviors that cannot be detected using conventional static analysis methods.

Successful root cause isolation requires precise failure localization, access to deeply embedded circuitry, and measurement techniques capable of capturing dynamic electrical behavior without modifying or masking the defect.

Sector Technologies provides advanced laser-based and electron-beam based waveform acquisition solutions that enable engineers to accelerate failure analysis, validate silicon performance, optimize yield, and support technology development from legacy CMOS technologies through advanced FinFET nodes.

Core Technologies

Near Infrared (NIR), Visible Laser, and Electron Beam based techniques enable real-time observation of transistor switching activity on electrically active devices.

These technologies provide non-destructive access to internal circuit behavior and support applications ranging from failure analysis and design debug to process development and hardware security investigations.

Applicable across technology nodes from mature CMOS processes to advanced FinFET architectures.