Dynamic FA & Design Debug

Dynamic analysis using Laser and Ebeam based real time transistor waveform acquisition

Overview

The capacity to enhance yield and reliability relies on thorough defect analysis. Debugging marginal failures at the design level can be particularly difficult, as they often stem from voltage or timing issues within the device. Identifying the root cause of a parametric failure requires pinpointing its exact location inside the device and accessing the relevant circuitry without causing damage or concealing the defects.

Core Technologies

Near Infrared, Visible Lasers and EBeam based techniques are available to extract activity information from an emulated device at transistor level.

Applicable from legacy CMOS technologies down to advance FinFET.


Solutions

The Meridian Product line covers from NIR, Visible down to EBeam Dynamic EFA applications, depending on customer resolution requirements. Probing is doable from 10’s of kHz up to GHz capability. CAD link (NEXS/Avalon) is available for probing location registration .

Meridian IV

Meridian EX

EBeam based system with Dynamic EFA Analysis and design Debug Capabilities

EBeam Voltage Imaging and Probing (EVI/EVP)

Targeted for technology below 7nm

Resolution down to 20nm

Datasheet

Meridian 7

LSM based system with both NIR and Visible laser sources

Suited for Dynamic EFA Analysis and design Debug

NIR & Visible (785nm) Laser Voltage Imaging and Probing (LVI/LVP)

Targeted for technology down to 7nm

Resolution down to 140nm

Dynamic analysis applications

Dynamic analysis enable multiple range of applications

Failure Analysis

Design Debug & validation

Technology development & support

Hardware security